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| BC817 / BC818 BC817 / BC818 NPN Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren fur die Oberflachenmontage Power dissipation - Verlustleistung 2.9 0.1 0.4 3 1.30.1 1.1 NPN 310 mW SOT-23 (TO-236) 0.01 g Version 2007-04-13 Plastic case Kunststoffgehause Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Type Code 1 1.9 2 Dimensions - Mae [mm] 1=B 2=E 3=C Maximum ratings (TA = 25C) Collector-Emitter-volt. - Kollektor-Emitter-Spannung Collector-Emitter-volt. - Kollektor-Emitter-Spannung Emitter-Base-voltage - Emitter-Basis-Spannung Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Peak Collector current - Kollektor-Spitzenstrom Peak Emitter current - Emitter-Spitzenstrom Peak Base current - Basis-Spitzenstrom Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur E-B short B open C open VCES VCEO VEBO Ptot IC ICM - IEM IBM Tj TS 2.5 max Grenzwerte (TA = 25C) BC817 50 V 45 V 5V 310 mW 1) 800 mA 1A 1A 200 mA -55...+150C -55...+150C BC818 30 V 25 V Characteristics (Tj = 25C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis 2) VCE = 1 V, IC = 100 mA Group -16 Group -25 Group -40 all groups hFE hFE hFE hFE 2 Kennwerte (Tj = 25C) Typ. - - - - - - Max. 250 400 630 - 0.7 V 1.3 V 100 160 250 40 - - VCE = 1 V, IC = 500 mA IC = 500 mA, IB = 50 mA IC = 500 mA, IB = 50 mA Collector-Emitter saturation voltage - Kollektor-Emitter-Sattigungsspg. ) VCEsat 2 Base-Emitter saturation voltage - Basis-Emitter-Sattigungsspannung ) VBEsat 1 2 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% http://www.diotec.com/ (c) Diotec Semiconductor AG 1 BC817 / BC818 Characteristics (Tj = 25C) Base-Emitter-voltage - Basis-Emitter-Spannung 2) VCE = 1 V, IC = 500 mA Collector-Base cutoff current - Kollektor-Basis-Reststrom VCB = 20 V, (E open) VCB = 20 V, Tj = 125C, (E open) Emitter-Base cutoff current - Emitter-Basis-Reststrom VEB = 4 V, (C open) Gain-Bandwidth Product - Transitfrequenz VCE = 5 V, IC = 10 mA, f = 50 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat VCB = 10 V, IE =ie = 0, f = 1 MHz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren Marking of available current gain groups per type Stempelung der lieferbaren Stromverstarkungsgruppen pro Typ CCBO RthA - 12 pF < 420 K/W 1) BC807 / BC808 BC817-16 = 6A or 6CR BC818-16 = 6E or 6CR BC817-25 = 6B or 6CS BC818-25 = 6F or 6CS BC817-40 = 6C or 6CT BC818-40 = 6G or 6CT - fT - 100 MHz - IEB0 - - 100 nA ICB0 ICB0 - - - - 100 nA 5 A VBE - - 1.2 V Kennwerte (Tj = 25C) Min. Typ. Max. 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [C] 1 Power dissipation versus ambient temperature ) 1 Verlustleistung in Abh. von d. Umgebungstemp. ) 2 1 Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG 2 |
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